二硒化鉿晶體 HfSe2（Hafnium Selenide）
晶體尺寸：~10毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120°
晶體類(lèi)型：合成
晶體純度：＞99.995%

二硒化鉿晶體 HfSe2(Hafnium Selenide)
晶體尺寸：~10毫米
電學(xué)性能：半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120°
晶體類(lèi)型：合成
晶體純度：＞99.995%

X-ray diffraction on a Hafnium Diselenide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 3, 4, 5

 

Powder X-ray diffraction (XRD) of a single crystal HfSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal HfSe2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal HfSe2. Measurement was performed with a 785 nm Raman system at room temperature.